Joseph J. Sumakeris: search on Z-Library

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1

Dislocation Characterization in 4H-SiC Crystals

Sumakeris, Joseph J., Leonard, R.T., Deyneka, Eugene, Khlebnikov, Yuri, Powell, Adrian R., Seaman, Jeff, Paisley, Michael J., Tsevtkov, V., Guo, Jian Qiu, Yang, Yu, Dudley, Michael, Balkas, Elif

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.13 MB

english, 2016

2

Structure of Carrot Defects in 4H-SiC Epilayers

Zhang, X., Ha, Seo Young, Benamara, M., Skowronski, Marek, Sumakeris, Joseph J., Ryu, Sei Hyung, Paisley, Michael J., O'Loughlin, Michael J.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 5.62 MB

english, 2006

3

Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy

Liu, Kendrick, Stahlbush, Robert E, Caldwell, Joshua D, Hobart, Karl D, Kub, Francis J, Sumakeris, Joseph J

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 269 KB

english, 2006

4

Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

Hull, Brett A., Sumakeris, Joseph J., O'Loughlin, Michael J., Zhang, Jon, Richmond, James, Powell, Adrian R., Paisley, Michael J., Tsvetkov, Valeri F., Hefner, A., Rivera, Angel

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 1.06 MB

english, 2009

5

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

Kordina, Olle, Irvine, Kenneth G., Sumakeris, Joseph J., Kong, H.S., Paisley, Michael J., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 380 KB

1998

6

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

Zhang, Jon, Jonas, Charlotte, Sumakeris, Joseph J., Agarwal, Anant, Palmour, John W.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 328 KB

english, 2009

7

Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method

Guo, Jian Qiu, Yang, Yu, Wu, Fang Zhen, Sumakeris, Joseph J., Leonard, R.T., Goue, O.Y., Raghothamachar, Balaji, Dudley, Michael

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 666 KB

english, 2016

8

RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates

Sriram, Saptharishi, Ward, A., Janke, C., Alcorn, T.S., Hagleitner, H., Henning, Jason, Wieber, K., Jenny, Jason R., Sumakeris, Joseph J., Allen, S.T.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 305 KB

english, 2004

9

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

Hull, Brett A., Das, Mrinal K., Richmond, James, Heath, Bradley, Sumakeris, Joseph J., Geil, Bruce, Scozzie, Charles J.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 2.58 MB

english, 2006

10

Drift-free 10-kV, 20-A 4H-SiC PiN diodes

Brett A. Hull, Mrinal K. Das, Joseph J. Sumakeris, James T. Richmond, Sumi Krishnaswami

Journal:

Journal of Electronic Materials

Year:

2005

Language:

english

File:

PDF, 259 KB

english, 2005

11

Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers

Huh, Sung Wook, Sumakeris, Joseph J., Polyakov, A.Y., Skowronski, Marek, Klein, P.B., Shanabrook, B.V., O'Loughlin, Michael J.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 224 KB

english, 2006

12

Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

Das, Mrinal K., Sumakeris, Joseph J., Hull, Brett A., Richmond, James

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 407 KB

english, 2006

13

Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures

Liu, Kendrick X., Stahlbush, Robert E., Hobart, Karl D., Sumakeris, Joseph J.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 278 KB

english, 2006

14

Silicon Carbide MESFET's for High-Power S-Band Applications

Allen, S.T., Sadler, R.A., Alcorn, T.S., Sumakeris, Joseph J., Glass, R.C., Carter Jr., Calvin H., Palmour, John W.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 293 KB

1998

15

Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes

Stahlbush, Robert E., Twigg, Mark E., Irvine, Kenneth G., Sumakeris, Joseph J., Chow, T.P., Losee, P.A., Zhu, Lin, Tang, Yi, Wang, W.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 400 KB

english, 2004

16

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields

Das, Mrinal K., Sumakeris, Joseph J., Hull, Brett A., Richmond, James, Krishnaswami, Sumi, Powell, Adrian R.

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 406 KB

english, 2005

17

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Sumakeris, Joseph J., Das, Mrinal K., Ha, Seo Young, Hurt, Edward, Irvine, Kenneth G., Paisley, Michael J., O'Loughlin, Michael J., Palmour, John W., Skowronski, Marek, McD. Hobgood, H., Carter Jr., C

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 386 KB

english, 2005

18

Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

Sumakeris, Joseph J., Hull, Brett A., O'Loughlin, Michael J., Skowronski, Marek, Balakrishna, Vijay

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 263 KB

english, 2007

19

Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications

Hull, Brett A., Sumakeris, Joseph J., Das, Mrinal K., Richmond, James, Palmour, John W.

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 438 KB

english, 2007

20

Do You Really Expect To Grow Epilayers On That? A Rationale For Growing Epilayers On Roughened Surfaces

Sumakeris, Joseph John, Hull, Brett A., O'Loughlin, Michael J., Ha, S., Skowronski, Marek, Palmour, John W., Carter, Calvin H.

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 242 KB

english, 2006

21

Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

Sumakeris, Joseph J., Das, Mrinal K., McD. Hobgood, H., Müller, Stephan G., Paisley, Michael J., Ha, Seo Young, Skowronski, Marek, Palmour, John W., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 1.85 MB

english, 2004

22

Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates

Sumakeris, Joseph J., Henning, Jason, O'Loughlin, Michael J., Sriram, Saptharishi, Balakrishna, Vijay

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 351 KB

english, 2009

23

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

Sumakeris, Joseph J., Bergman, J. Peder, Das, Mrinal K., Hallin, Christer, Hull, Brett A., Janzén, Erik, Lendenmann, H., O'Loughlin, Michael J., Paisley, Michael J., Ha, Seo Young, Skowronski, Marek,

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 1.06 MB

english, 2006

24

Large Diameter 4H-SiC Substrates for Commercial Power Applications

Powell, Adrian R., Leonard, R.T., Brady, M.F., Müller, Stephan G., Tsvetkov, Valeri F., Trussell, R., Sumakeris, Joseph J., McD. Hobgood, H., Burk, Al A., Glass, R.C., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 8.91 MB

english, 2004

25

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Defects Limiting Minorty Carrier Lifetime in 4H-SiC Epilayers

Klein, Paul B., Shanabrook, Benjamin, Huh, Sung Wook, Polyakov, Alexander, Skowronski, Marek, Sumakeris, Joseph, O'Loughlin, Michael

Year:

2006

Language:

english

File:

PDF, 467 KB

english, 2006

26

Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy

Stahlbush, Robert E., Liu, Kendrick X., Zhang, Q., Sumakeris, Joseph J.

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 3.86 MB

english, 2007

27

High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift

Das, Mrinal K., Sumakeris, Joseph J., Paisley, Michael J., Powell, Adrian R.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 673 KB

english, 2004

28

Bulk Growth of Large Area SiC Crystals

Powell, Adrian R., Sumakeris, Joseph J., Khlebnikov, Yuri, Paisley, Michael J., Leonard, R.T., Deyneka, Eugene, Gangwal, Sumit, Ambati, Jyothi, Tsevtkov, V., Seaman, Jeff, McClure, Andy, Horton, Chris

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.18 MB

english, 2016

29

HIGH POWER, DRIFT-FREE 4H-SiC PIN DIODES

DAS, MRINAL K., SUMAKERIS, JOSEPH J., HULL, BRETT A., RICHMOND, JIM, KRISHNASWAMI, SUMI, POWELL, ADRIAN R.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 404 KB

english, 2004

30

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

Burk, Al A., O'Loughlin, Michael J., Sumakeris, Joseph J., Hallin, C., Berkman, Elif, Balakrishna, Vijay, Young, Jonathan, Garrett, L., Irvine, Kenneth G., Powell, Adrian R., Khlebnikov, Y., Leonard,

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 1.41 MB

english, 2009

31

A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching

Das, Mrinal K., Zhang, Jon, Callanan, Robert, Capell, Craig, Clayton, Jack, Donofrio, Matthew, Haney, Sarah K., Husna, Fatima, Jonas, Charlotte, Richmond, James, Sumakeris, Joseph J.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 417 KB

english, 2009

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